TY  - 
  - Other
  - Minehane, S,Healy, S,OSullivan, P,McCarthy, K,Mathewson, A,Mason, B
  - 1997
  - October
  - Direct parameter extraction for hot-carrier reliability simulation
  - Validated
  - 1
  - ()
  - DEGRADATION MODEL
  - This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd.
  - 1437
  - 1440
DA  - 1997/10
ER  - 

@misc{V160958264,
   = {Other},
   = {Minehane,  S and Healy,  S and OSullivan,  P and McCarthy,  K and Mathewson,  A and Mason,  B },
   = {1997},
   = {October},
   = {Direct parameter extraction for hot-carrier reliability simulation},
   = {Validated},
   = {1},
   = {()},
   = {DEGRADATION MODEL},
   = {{This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd.}},
  pages = {1437--1440},
  source = {IRIS}
}