TY  - JOUR
  - MacSweeney, D,McCarthy, KG,Floyd, L,Duane, R,Hurley, P,Power, JA,Kelly, SC,Mathewson, A
  - 2003
  - March
  - IEEE Transactions on Semiconductor Manufacturing
  - Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size
  - Validated
  - ()
  - bipolar and BiCNIOS processes bipolar transistors capacitance measurement parameter estimation DESIGN
  - 16
  - 207
  - 214
  - In this paper, the on-wafer measurement of junction depletion capacitance is examined This work provides-an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure. the junction capacitances accurately. The results from this method compare favorably with those extracted using S-parameter measurements. Additionally, methods are formulated to reduce the number of data points required for parameter extraction while at the same time maintaining a high model accuracy.
  - DOI 10.1109/TSM.2003.811577
DA  - 2003/03
ER  - 

@article{V160960595,
   = {MacSweeney,  D and McCarthy,  KG and Floyd,  L and Duane,  R and Hurley,  P and Power,  JA and Kelly,  SC and Mathewson,  A },
   = {2003},
   = {March},
   = {IEEE Transactions on Semiconductor Manufacturing},
   = {Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size},
   = {Validated},
   = {()},
   = {bipolar and BiCNIOS processes bipolar transistors capacitance measurement parameter estimation DESIGN},
   = {16},
  pages = {207--214},
   = {{In this paper, the on-wafer measurement of junction depletion capacitance is examined This work provides-an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure. the junction capacitances accurately. The results from this method compare favorably with those extracted using S-parameter measurements. Additionally, methods are formulated to reduce the number of data points required for parameter extraction while at the same time maintaining a high model accuracy.}},
   = {DOI 10.1109/TSM.2003.811577},
  source = {IRIS}
}