A physical compact model for direct tunneling from NMOS inversion layers

Typeset version

 

TY  - JOUR
  - Clerc, R and O'sullivan, P and McCarthy, KG and Ghibaudo, G and Pananakakis, G and Mathewson, A
  - 2001
  - January
  - Solid-State Electronics
  - A physical compact model for direct tunneling from NMOS inversion layers
  - Validated
  - 45
  - 10
  - 1705
  - 1716
DA  - 2001/01
ER  - 
@article{V276842029,
   = {Clerc, R and O'sullivan, P and McCarthy, KG and Ghibaudo, G and Pananakakis, G and Mathewson, A},
   = {2001},
   = {January},
   = {Solid-State Electronics},
   = {A physical compact model for direct tunneling from NMOS inversion layers},
   = {Validated},
   = {45},
   = {10},
  pages = {1705--1716},
  source = {IRIS}
}
AUTHORSClerc, R and O'sullivan, P and McCarthy, KG and Ghibaudo, G and Pananakakis, G and Mathewson, A
YEAR2001
MONTHJanuary
JOURNALSolid-State Electronics
TITLEA physical compact model for direct tunneling from NMOS inversion layers
STATUSValidated
PEER_REVIEW
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VOLUME45
ISSUE10
START_PAGE1705
END_PAGE1716
ABSTRACT
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