IRIS publication 376302
Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS
RIS format for Endnote and similar
TY - CONF - MacSweeney,D.; McCarthy,K.; Mathewson,A.; Mason,B. - IEE Colloquium on Advanced MOS and Bi-Polar Devices - Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS - London, U.K. - Oral Presentation - 1995 - () - 14-FEB-95 - 14-FEB-95 - N/A DA - 1995/NaN ER -
BIBTeX format for JabRef and similar
@unpublished{V376302, = {MacSweeney,D. and McCarthy,K. and Mathewson,A. and Mason,B.}, = {IEE Colloquium on Advanced MOS and Bi-Polar Devices}, = {{Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS}}, = {London, U.K.}, = {Oral Presentation}, = {1995}, = {()}, month = {Feb}, = {14-FEB-95}, = {N/A}, source = {IRIS} }
Data as stored in IRIS
AUTHORS | MacSweeney,D.; McCarthy,K.; Mathewson,A.; Mason,B. | ||
TITLE | IEE Colloquium on Advanced MOS and Bi-Polar Devices | ||
PUBLICATION_NAME | Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS | ||
LOCATION | London, U.K. | ||
CONFERENCE_TYPE | Oral Presentation | ||
YEAR | 1995 | ||
TIMES_CITED | () | ||
PEER_REVIEW | |||
START_DATE | 14-FEB-95 | ||
END_DATE | 14-FEB-95 | ||
ABSTRACT | |||
FUNDED_BY | N/A |