TY  - CONF
  - Cahill,C.G.; McCarthy,K.; Lane,W.A.
  - 2nd International Conference on the Simulation of Semiconductor Devices and Processes (Vol. 2)
  - MOS Model Parameter Extraction Techniques: A Comparison
  - 1986
  - July
  - Published
  - 1
  - ()
  - Board,K.; Owen,D.R.J.
  - Swansea, U.K.
  - 21-JUL-86
  - 23-JUL-86
DA  - 1986/07
ER  - 

@inproceedings{V376307,
   = {Cahill,C.G. and  McCarthy,K. and  Lane,W.A.},
   = {2nd International Conference on the Simulation of Semiconductor Devices and Processes (Vol. 2)},
   = {{MOS Model Parameter Extraction Techniques: A Comparison}},
   = {1986},
   = {July},
   = {Published},
   = {1},
   = {()},
   = {Board,K. and  Owen,D.R.J.},
   = {Swansea, U.K.},
  month = {Jul},
   = {23-JUL-86},
  source = {IRIS}
}