IRIS publication 43336774
Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V
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TY - JOUR - O'Sullivan, JA,McCarthy, KG,Murphy, AC,Murphy, PJ - 2006 - April - IEEE Microwave and Wireless Components Letters - Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V - Validated - () - class E/F heterojunction bipolar transistor (HBT) RFIC power amplifier (PA) POWER-AMPLIFIER - 16 - 170 - 172 - This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At I V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-mu m BiCMOS process. - DOI 10.1109/LMWC.2006.872144 DA - 2006/04 ER -
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@article{V43336774, = {O'Sullivan, JA and McCarthy, KG and Murphy, AC and Murphy, PJ }, = {2006}, = {April}, = {IEEE Microwave and Wireless Components Letters}, = {Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V}, = {Validated}, = {()}, = {class E/F heterojunction bipolar transistor (HBT) RFIC power amplifier (PA) POWER-AMPLIFIER}, = {16}, pages = {170--172}, = {{This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At I V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-mu m BiCMOS process.}}, = {DOI 10.1109/LMWC.2006.872144}, source = {IRIS} }
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AUTHORS | O'Sullivan, JA,McCarthy, KG,Murphy, AC,Murphy, PJ | ||
YEAR | 2006 | ||
MONTH | April | ||
JOURNAL_CODE | IEEE Microwave and Wireless Components Letters | ||
TITLE | Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V | ||
STATUS | Validated | ||
TIMES_CITED | () | ||
SEARCH_KEYWORD | class E/F heterojunction bipolar transistor (HBT) RFIC power amplifier (PA) POWER-AMPLIFIER | ||
VOLUME | 16 | ||
ISSUE | |||
START_PAGE | 170 | ||
END_PAGE | 172 | ||
ABSTRACT | This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At I V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-mu m BiCMOS process. | ||
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DOI_LINK | DOI 10.1109/LMWC.2006.872144 | ||
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