IRIS publication 720818
Practical Considerations For Measurements of Test Structures For Dielectric Characterization
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TY - - Articles - Chen, WB, McCarthy, KG, Mathewson, A - 2009 - September - Practical Considerations For Measurements of Test Structures For Dielectric Characterization - Author - Validated - 0 - () - This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO2 layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and S-parameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections.. - 221 - 225 DA - 2009/09 ER -
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@article{V720818, = {Articles}, = {Chen, WB and McCarthy, KG and Mathewson, A }, = {2009}, = {September}, = {Practical Considerations For Measurements of Test Structures For Dielectric Characterization}, = {Author}, = {Validated}, = {0}, = {()}, = {{This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO2 layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and S-parameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections..}}, pages = {221--225}, source = {IRIS} }
Data as stored in IRIS
OTHER_PUB_TYPE | Articles | ||
AUTHORS | Chen, WB, McCarthy, KG, Mathewson, A | ||
YEAR | 2009 | ||
MONTH | September | ||
TITLE | Practical Considerations For Measurements of Test Structures For Dielectric Characterization | ||
RESEARCHER_ROLE | Author | ||
STATUS | Validated | ||
PEER_REVIEW | 0 | ||
TIMES_CITED | () | ||
SEARCH_KEYWORD | |||
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ABSTRACT | This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO2 layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and S-parameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections.. | ||
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START_PAGE | 221 | ||
END_PAGE | 225 | ||
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